The IRFZ44N Mosfet IC Dip-3 Pin PackageĀ is a widely used N-channel power MOSFET known for its high efficiency and low cost, making it a popular choice in various power switching applications. It features a maximum drain-source voltage (V_DS) of 55V and can handle continuous drain currents up to 49A. This makes it suitable for medium to high power applications, including motor control, power supply regulation, and DC-DC converters. The MOSFET has a low on-resistance (R_DS(on)) of 17.5 mĪ©, which helps minimize power losses and heat generation during operation, thus improving overall system efficiency.
Encapsulated in a TO-220 package, the IRFZ44N provides a robust and thermally efficient solution for through-hole mounting. This three-pin configuration includes the gate (G), drain (D), and source (S) terminals, making it straightforward to integrate into various circuit designs. The TO-220 package also facilitates easy heat dissipation, essential for maintaining performance under high current loads. Additionally, the IRFZ44N’s fast switching speed and rugged design contribute to its reliability in demanding environments, further enhancing its versatility across a broad range of electronic applications.
Features:-
ā¢ Advanced Process Technology
ā¢ Ultra Low On-Resistance
ā¢ 175Ā°C Operating Temperature
ā¢ Fast Switching
ā¢ Repetitive Avalanche Allowed up to Tjmax
ā¢ Lead-Free, RoHS Compliant
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown VoltageĀ (Vds) | 55V |
| Continuous Drain Current (Id) | 49A |
| Drain-Source Resistance (Rds On) | 0.0175Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 63 nC |
| Operating Temperature Range | -55 – 175Ā°C |
| Power Dissipation (Pd) | 94W |
- Clock Speed: 16 MHz
To Learn More Visit our Website
For more information:- www.mifraelectronics.comĀ
* Product Images are shown for illustrative purposes only and may differ from actual product.
Package Includes :
- 1 x IRFZ44N Mosfet IC Dip-3 Pin Package.
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