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1N5819 40V 1A Schottky Barrier Diode



• Extremely Low VF

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• These are Pb−Free Devices

• Weight: 0.4 Gram (Approximately)

  • Case: Epoxy, Molded
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The 1N5819 40V 1A Schottky Barrier Diode, a vital semiconductor device in electronics, serves as a high-performance rectifier with distinctive characteristics, making it a preferred choice for various applications.

Transitioning to its fundamental features, the Schottky diode boasts a low forward voltage drop due to its metal-semiconductor junction. This feature makes it well-suited for scenarios where minimizing voltage loss in rectification processes is crucial, enhancing overall circuit efficiency.

Moreover, the diode’s 40V voltage rating provides a suitable margin for applications that involve higher voltage levels.
In terms of construction, the diode is designed for reliability and efficiency. Its compact axial-lead package facilitates easy integration into circuit boards, offering convenience in assembly and space utilization. The cylindrical form factor is a standard in many electronic designs, contributing to the diode’s widespread use.

Furthermore, the 1N5819 seamlessly interfaces with other electronic components, allowing for flexibility in circuit design. Its compatibility with resistors, capacitors, and other diodes makes it an integral part of various rectification and voltage regulation setups.

Practically speaking, the diode plays a crucial role in preventing reverse current flow in circuits, making it suitable for rectification applications. Its Schottky barrier design also ensures fast switching characteristics, which is beneficial in high-frequency applications where quick response times are essential.

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For more information:-www.mifraelectronics.com 

* Product Images are shown for illustrative purposes only and may differ from actual product.

Package Includes:

  • 1 x 1N5819 40V 1A Schottky Barrier Diode.


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