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BC546 NPN General Purpose Transistor 65V 100mA TO-92 FROM MIFRA TECH

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BC546 NPN Amplifier Transistor with 65V DC Emiiter Voltage and 100mA current made through P and N type Semiconductor. When a Semiconductor is placed in center between same type semiconductors the Arrangement is Called Transistor. Consist of three layers of a semiconductor device, Each capable of moving a current. Semiconductor is a made by Germanium and Silicon that conducts electricity also it is combination of two Diode.

BC546 NPN Amplifier Transistor with 65V DC Emiiter Voltage and 100mA current made through P and N type Semiconductor. When a Semiconductor is placed in center between same type semiconductors the Arrangement is Called Transistor. Consist of three layers of a semiconductor device, Each capable of moving a current. Semiconductor is a made by Germanium and Silicon that conducts electricity also it is combination of two Diode.

Used for Mobile phones, Industrial Control, Television and Flip-flops, High Frequency Application such as Radio Frequency Audio Circuit.

Features:-

  • NPN Amplifier Transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
  • The NPN Amplifier Transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems.
  • NPN Amplifier Transistor very small size and weight, reducing equipment size. Operates at low operating voltages compatible with batteries of only a few cells.
  • NPN Amplifier Transistor are circuits with greater energy efficiency are usually possible. Used for low-power applications.

Detailed Specifications:-

Transistor Polarity NPN
Collector-Base Voltage (VCBO) 80VDC
Collector-Emitter Voltage (VCEO) 65VDC
Emitter-Base Voltage (VEBO) 6VDC
Continuous Collector Current (IC) 100mA
Output Capacitance (Cobo) 4.5pF
Transition Frequency (fT) 300MHz
DC Current Gain (hFE) 110-450
Operating Temperature Range -55 – 150°C
Power Dissipation (PD) 625mW

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